dm n10h100sk3 document number: ds 37858 rev. 2 - 2 1 of 7 www.diodes.com april 2015 ? diodes incorporated new product new product dm n10h100sk3 100v n - channel enhancement mode mosfet product summary b v dss r ds( on ) max i d t c = + 25 c 1 0 0 v 80 m ? @ v gs = 10v 18a 100 m ? @ v gs = 4.5 v 16a description this new generation mosfet features low on - resistance and fast switching, making it ideal for high efficiency power management applications. applications ? power management functions ? dc - dc converters features ? low r ds(on) C ensures on state losses are minimized ? small form factor thermally efficient package enables higher density end products ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) mechanical data ? case: to25 2 ? case m aterial: molded plastic, green molding compound ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish C matte tin a nnealed over copper l eadframe solderable per mil - std - 202, method 208 ? weight: 0. 33 grams ( a pproximate) ordering information (note 4 ) part number case packaging dmn 1 0 h 100 s k 3 - 13 to25 2 2 , 5 00/tape & reel notes: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information internal schematic top view pin out top view to252 to252 g s d d yyww n100sk =manufacturers marking n100sk = product type marking code yyww = date code marking yy = last digit of year (ex: 14 = 2014) ww = week code (01 to 53)
dm n10h100sk3 document number: ds 37858 rev. 2 - 2 2 of 7 www.diodes.com april 2015 ? diodes incorporated new product new product dm n10h100sk3 maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 10 0 v gate - source voltage v gss 2 0 v continuous drain current (note 6 ) v gs = 10 v t c = +25c t c = + 7 0c i d 18 14 a pulsed drain current ( 38 0 dm 16 a avalanche current, l = 1 mh (note 7 ) i as 8 a avalanche energy, l = 1 mh (note 7 ) e as 32.6 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 6 ) t c = + 25c p d 37 w t c = + 7 0c 2 4 thermal resistance, junction to ambient (note 5 ) r ja 46 c/w thermal resistance, junction to case (note 6 ) r j c 3. 3 operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristic s (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 1 0 0 ? ? gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? ds = 8 0 v, v gs = 0v gate - source leakage i gss ? ? gs = 2 0 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) 1 .0 2.0 3 .0 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) ? ? gs = 10 v, i d = 3.3 a ? gs = 4.5 v, i d = 2 a diode forward voltage v sd ? ? gs = 0v, i s = 3.2 a dynamic characteristics (note 7 ) input capacitance c iss ? ? ds = 50 v, v gs = 0v , f = 1 mhz output capacitance c oss ? ? rss ? ? g ? ? ? ? ? ds = 0 v, v gs = 0v , f = 1 mhz total gate charge ( v gs = 10 v ) q g ? ? ? ds = 50 v, i d = 3.3 a total gate charge ( v gs = 4.5 v ) q g ? ? ? ? gs ? ? gd ? ? d( on ) ? ? dd = 50 v, r g = 6.0 ? d = 3.3 a turn - on rise time t r ? ? d( off ) ? ? f ? ? ? ? rr ? ? f = 3 .3 a , di /d t = 100a/ rr ? ? ? ? notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1 - inch square copper plate. 6 . device mounted on infinite heatsink . 7 . guaranteed by design. not subject to product testing. 8 . short duration pulse test used to minimize self - heating effect.
dm n10h100sk3 document number: ds 37858 rev. 2 - 2 3 of 7 www.diodes.com april 2015 ? diodes incorporated new product new product dm n10h100sk3 0 1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds =10.0v - 55 25 85 125 150 0.0 4.0 8.0 12.0 16.0 20.0 0 1 2 3 4 5 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs =3.5v v gs =4.0v v gs =4.5v v gs =5.0v v gs =6.0v v gs =8.0v v gs =10.0v 0 0.02 0.04 0.06 0.08 0.1 0 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance ( ? ) i d , drain - source current (a) figure 3. typical on - resistance vs drain current and gate voltage v gs =6.0v v gs =10v 0 0.1 0.2 0.3 0.4 0.5 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance ( ? ) v gs , gate - source voltage (v) figure 4. typical transfer characteristic i d =3.3a i d =3.0a 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0 1 2 3 4 5 6 7 8 9 10 r ds(on) , drain - source on - resistance ( ? ) i d , drain current (a) figure 5. typical on - resistance vs drain current and temperature v gs =10v - 55 25 85 125 150 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( ) figure 6. on - resistance variation with temperature v gs =5v, i d =1.0a v gs =10v, i d =5a
dm n10h100sk3 document number: ds 37858 rev. 2 - 2 4 of 7 www.diodes.com april 2015 ? diodes incorporated new product new product dm n10h100sk3 0 0.03 0.06 0.09 0.12 0.15 -50 -25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( ? ) t j , junction temperature ( ) figure 7. on - resistance variation with temperature v gs =5v, i d =1.0a v gs =10v, i d =5a 1 1.3 1.6 1.9 2.2 2.5 -50 -25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( ) figure 8. gate threshold variation vs temperature i d =1ma i d =250 a 0 1 2 3 4 5 6 7 8 9 10 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs current t a = - 55 t a =25 t a =85 t a =125 t a =150 v gs =0v 10 100 1000 10000 0 5 10 15 20 25 30 35 40 45 50 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 1000 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area t j(max) =150 t c =25 single pulse dut on infinite heatsink v gs =10v r ds(on) limited p w =1s p w =10ms p w =100ms p w =1ms p w =100 s p w =10 s p w =1 s 0 2 4 6 8 10 0 5 10 15 20 25 v gs (v) q g , total gate charge (nc) figure 11. gate charge v ds =50v, i d =3.3a
dm n10h100sk3 document number: ds 37858 rev. 2 - 2 5 of 7 www.diodes.com april 2015 ? diodes incorporated new product new product dm n10h100sk3 0.001 0.01 0.1 1 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance r jc (t)=r(t) * r jc r jc =3.3 /w duty cycle, d=t1/ t2 d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.7 d=0.9
dm n10h100sk3 document number: ds 37858 rev. 2 - 2 6 of 7 www.diodes.com april 2015 ? diodes incorporated new product new product dm n10h100sk3 package outline dimensions please see ap0200 1 at http://www.diodes.com/datasheets/ ap0200 1 .pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. to252 (dpak) dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0. 64 0. 88 0. 7 83 b2 0. 7 6 1.14 0. 95 b3 5.21 5.46 5.3 3 c2 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 - - e - - 2.286 e 6.45 6.70 6.58 e1 4.32 - - h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 - all dimensions in mm dimensions value (in mm) c 4.572 x 1.0 60 x1 5.632 y 2.6 0 0 y1 5.700 y 2 10.700 x1 x y2 y1 y c b3 e l3 d l4 b2(2x) b(3x) e c2 a 71 h seating plane a1 gauge plane a 0.508 l 2.74ref d1 a2 e1
dm n10h100sk3 document number: ds 37858 rev. 2 - 2 7 of 7 www.diodes.com april 2015 ? diodes incorporated new product new product dm n10h100sk3 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application , customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or fore ign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems witho ut the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices o r systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expec ted to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory a nd safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by di odes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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